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Figure 1 shows a simplified structure of an N-channel enhancement mode MOSFET - AQA - A-Level Physics - Question 1 - 2021 - Paper 8

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Figure 1 shows a simplified structure of an N-channel enhancement mode MOSFET. State the name of the part shown in this MOSFET structure that causes the input resis... show full transcript

Worked Solution & Example Answer:Figure 1 shows a simplified structure of an N-channel enhancement mode MOSFET - AQA - A-Level Physics - Question 1 - 2021 - Paper 8

Step 1

State the name of the part shown in this MOSFET structure that causes the input resistance to be very large.

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Answer

The part that causes the input resistance to be very large in the MOSFET structure is the silicon dioxide layer.

Step 2

Which terminal of the MOSFET is connected directly to 0 V when it is used as a simple switch?

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Answer

The terminal connected directly to 0 V when the MOSFET is used as a simple switch is the source.

Step 3

Deduce the minimum value of $V_{GS}$ needed for the lamp to operate at full power.

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Answer

To determine the minimum value of VGSV_{GS} needed for the lamp to operate at full power, we first calculate the current using the formula for power:

P=IimesRP = I imes R Substituting the known values:

0.65=Iimes1540.65 = I imes 154

Solving for current (II), we find:

I = rac{0.65}{154} ext{ A} \approx 0.00423 ext{ A} \approx 4.23 ext{ mA}

Next, we need to read from the graph (Figure 2), where the drain-source current IDSI_{DS} shows that for a current of approximately 4.23 mA, a gate-source voltage VGSV_{GS} of 3.4 V is necessary.

Step 4

Discuss, using the data provided, the relevance of this information.

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Answer

The relevance of the data provided lies primarily in its implications for energy management and efficiency in mobile devices. For instance, the CPU of a mobile phone utilizes a significant number of transistors (approximately 8.5imes1098.5 imes 10^9) which indicates a complex operation that relies on effective switching. Given the low power consumption of individual MOSFETs (with a leakage current of around 10 nA), understanding the TlossT_{loss} value becomes crucial for optimizing the overall battery consumption of the device. Moreover, the battery capacity and the ability to remain functional for approximately 12 hours on standby also highlights the importance of creating energy-efficient designs in modern mobile technology.

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