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Figure 1 shows a simplified structure of an N-channel enhancement mode MOSFET - AQA - A-Level Physics - Question 1 - 2021 - Paper 8

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Figure 1 shows a simplified structure of an N-channel enhancement mode MOSFET. State the name of the part shown in this MOSFET structure that causes the input resis... show full transcript

Worked Solution & Example Answer:Figure 1 shows a simplified structure of an N-channel enhancement mode MOSFET - AQA - A-Level Physics - Question 1 - 2021 - Paper 8

Step 1

State the name of the part shown in this MOSFET structure that causes the input resistance to be very large.

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Answer

The part that causes the input resistance to be very large is the silicon dioxide layer.

Step 2

Which terminal of the MOSFET is connected directly to 0 V when it is used as a simple switch?

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Answer

The terminal connected directly to 0 V is the source.

Step 3

Deduce the minimum value of $V_{GS}$ needed for the lamp to operate at full power.

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Answer

To find the minimum value of VGSV_{GS} necessary for the lamp to operate at full power, we can utilize the power formula:

P=I2R,P = I^2 R, where the total power PP is 0.65 W and the resistance RR is 154 Ω.

First, calculate the current:

I = rac{ ext{Power}}{ ext{Resistance}} = rac{0.65}{154} ext{ A} = 0.00423 ext{ A} ext{ (approximately)}.

From the graph, identify the VGSV_{GS} values where the current IDSI_{DS} is approximately 4.23 mA. The threshold voltage VGSV_{GS} required is approximately 3.4 V to ensure proper operation.

Step 4

Discuss, using the data provided, the reasons for the number of transistors in the CPU.

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Answer

The CPU contains about 8.5imes1098.5 imes 10^9 transistors, which allows for increased performance and efficiency in computations. Greater transistor counts enable parallel processing, allowing the CPU to handle more instructions simultaneously.

With the battery capacity of 3110 mAh, and the CPU's efficiency in terms of power usage, we can estimate the operating time. The standby current consumption (about 10 nA for an individual MOSFET) sums up to an overall energy-efficient design, allowing the mobile phone to last longer between charges.

This high number of transistors also allows for more complex tasks to be processed, making modern mobile phones capable of running sophisticated applications seamlessly.

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