Reverse Biased Diode Simplified Revision Notes for Scottish Highers Physics
Revision notes with simplified explanations to understand Reverse Biased Diode quickly and effectively.
Learn about Diodes for your Scottish Highers Physics Exam. This Revision Note includes a summary of Diodes for easy recall in your Physics exam
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Reverse Biased Diode
Reverse Biased Diode
Introduction
In semiconductor devices, such as diodes, the concept of reverse biasing is crucial for controlling the flow of electric current.
Reverse biasing involves connecting the diode in such a way that the p-type region is connected to the negative supply terminal, and the n-type region is connected to the positive supply terminal.
Electric Field and Depletion Layer
When a diode is reverse-biased, the electric field across the depletion layer within the p-n junction increases significantly.
The depletion layer, as explained earlier, is a region at the junction boundary where no free charge carriers are present.
Barrier to Electron Flow
The increased electric field in reverse biasing acts as a stronger barrier to the flow of electrons.
Electrons in the n-type region are pushed away from the junction, and holes in the p-type region are pushed away from the junction as well.
Valence Band Energy Levels
One of the key effects of reverse biasing is the change in the energy levels within the p-n junction.
In the p-type material, the valence band's energy level is raised above the energy level of the free electrons in the conduction band of the n-type material.
This energy level difference is a result of both the doping process (introducing impurities) and the electric field created by reverse biasing.
Barrier to Current Flow
The raised energy level of the valence band in the p-type material and the lowered energy level of the conduction band in the n-type material create a larger energy barrier at the junction.
This barrier prevents the free electrons in the n-type region from easily transitioning into the p-type region.
Reverse Biased Diode
Current Flow in Reverse Bias
In a reverse-biased diode, there is a very small leakage current, often referred to as reverse saturation current.
This current is due to a tiny number of charge carriers (electrons and holes) that can overcome the energy barrier and cross the junction, albeit at a very low rate.
Applications
Reverse biased diodes find applications in various electronic circuits, such as rectifiers and voltage regulators, where they are used to control and manipulate the flow of current.
Key Points
Reverse biasing involves connecting the diode with the p-type connected to the negative supply terminal and the n-type connected to the positive terminal.
The increased electric field in reverse bias creates a strong barrier to electron flow.
Energy level differences at the junction result in a significant energy barrier that restricts current flow in reverse bias.
Reverse-biased diodes exhibit very low leakage current.
Summary
Reverse biasing is a fundamental concept in diode operation, where the diode is connected in a way that impedes the flow of electric current. The increased electric field and energy barrier at the p-n junction prevent significant current flow, making reverse biased diodes useful for specific electronic applications.
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